Accession Number : AD0428828


Title :   DIFFUSION, SOLUBILITY, AND DISTRIBUTION COEFFICIENT OF ZINC IN GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE,


Corporate Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS


Personal Author(s) : CHANG,Leroy L


Report Date : Oct 1963


Pagination or Media Count : 59


Abstract : Radiotracer Zn65 was vapor diffused in GaAs and GaP single crystals in closed, evacuated quartz ampoules. The solubilities and diffusion profiles were obtained over the temperature range 700 to 1100 C. The solubility data were analyzed by assuming Zn-GaAs and Zn-GaP to be binary systems and considering the transfer of neutral Zn from the liquid to the solid where some Zn atoms become ionized acceptors. The solubilities and distribution coefficients of Zn in these two semiconductor were calculated as functions of temperature up to the melting point of the solvents. The experimentally measured diffusion profile exhibit a steep front for Zn in GaAs above 700 C and for Zn in GaP above 900 C. Application of the Boltzmann-Matano method to these profiles shows that the diffusion coefficient is strongly concentration-dependent. A precise evaluation of this dependence was obtained from isoconcentration diffusions performed at a fixed temperature: 900 C for Zn in GaAs and 1000 C for Zn in GaP. (Author)


Descriptors :   *ZINC , *GALLIUM ALLOYS , *GALLIUM ALLOYS , DIFFUSION , PHOSPHIDES , ARSENIC ALLOYS , PHYSICAL CHEMISTRY , DISTRIBUTION , SOLUBILITY , HIGH TEMPERATURE , RADIOACTIVE ISOTOPES , TRACER STUDIES , PHYSICAL PROPERTIES , MATHEMATICAL ANALYSIS , MATHEMATICAL MODELS , VAPORS , SOLVATION , SEMICONDUCTORS , TEMPERATURE , SOLVENTS , MOLECULAR ELECTRONICS , INTERMETALLIC COMPOUNDS


Distribution Statement : APPROVED FOR PUBLIC RELEASE