Accession Number : AD0428590


Title :   CHEMICAL FORMATION OF MICROCIRCUIT ELEMENTS.


Descriptive Note : Rept. for 28 Jan-27 Sep 63,


Corporate Author : WESTON INSTRUMENTS INC NEWARK N J


Personal Author(s) : Lakshmanan,T K ; Wysocki,C A ; Mitchell,J M


Report Date : Dec 1963


Pagination or Media Count : 52


Abstract : A sputtering technique for the preparation of dielectric films of titanium oxide is described. Uniformity, reproducibility, and stability during the period of test were established. Capacitance values are about 0.4 microfarads/sq. cm. Frequency dependence and temperature coefficient of capacitance and dissipation are given. Curves showing long term stability of resistive films are included. The feasibility of using this technique for developing titanium resistors and capacitors is demonstrated. (Author)


Descriptors :   *DIELECTRIC FILMS , *TITANIUM COMPOUNDS , *CAPACITANCE , OXIDES , MEASUREMENT , TEMPERATURE , CAPACITORS , RESISTORS , SUBMINIATURE ELECTRONIC EQUIPMENT , CHEMICAL ANALYSIS


Distribution Statement : APPROVED FOR PUBLIC RELEASE