Accession Number : AD0428424
Title : P-N JUNCTION FORMATION TECHNIQUES.
Descriptive Note : Quarterly technical progress rept. no. 1, 2 Oct 63-2 Jan 64.
Corporate Author : ION PHYSICS CORP BURLINGTON MASS
Report Date : 02 Jan 1964
Pagination or Media Count : 66
Abstract : An applied research program has been initiated to increase the state-of-the-art efficiency of solar cells produced by ion implantation techniques and to demonstrate feasibility for producing thin film solar cells by plasma deposition. During this quarter, efforts in the ion implantation area primarily have involved foundation investigations and equipment modifications. Previous investigations had pointed out three major problem areas in ion implantation cells; material problems, resistivity problems, and other problems resulting from implantation techniques. The latter, in particular, involved forward leakage effects which were masking the effects on cell performance of other variables such as junction profile variations. A major effort was made to determine the reasons for this leakage and results unequivocably indicate the source to be pipes caused by dirt-shadowing during implantation. An extensive investigation was initiated into an exact measurement of the actual junction profiles present as a function of implantation parameters and annealing procedures. This involves a determination of the ratio of electrically active to physically present phosphorous by resistivity and tracer techniques. (Author)
Descriptors : *SOLAR CELLS , *SEMICONDUCTING FILMS , SILICON , VAPOR PLATING , SINGLE CRYSTALS , VACUUM APPARATUS , PLASMAS(PHYSICS) , TANTALUM , GLASS , PHOSPHORUS , IONS , ELECTRICAL RESISTANCE , PRODUCTION , MANUFACTURING , TRACER STUDIES
Distribution Statement : APPROVED FOR PUBLIC RELEASE