Accession Number : AD0428335


Title :   INVESTIGATION OF ZINC BLENDE TYPE SEMICONDUCTORS,


Corporate Author : BATTELLE MEMORIAL INST COLUMBUS OHIO


Personal Author(s) : Beer,A C


Report Date : 25 Oct 1963


Pagination or Media Count : 19


Abstract : The accomplishments are presented under three broad categories, namely: I. Research concerned with InSb, which involves transport effects, high pressure phase transitions, and studies of the kinetics of crystal growth and related phenomena; II. Studies of impurity behavior in GaSb, which have shed light on the nature of the residual acceptors present in material prepared under conditions conducive to achievement of highest purity; and III. Transport studies in GaSb, which have revealed the importance of impurity states associated with subsidiary conduction band minima. Implications of the findings in these areas are discussed, and suggestions for further work are given in certain instances. (Author)


Descriptors :   *GALLIUM ALLOYS , CRYSTAL GROWTH , CRYSTAL DEFECTS , TRANSISTORS , SEMICONDUCTOR DIODES , RELAXATION TIME , LITHIUM , DIFFUSION


Distribution Statement : APPROVED FOR PUBLIC RELEASE