Accession Number : AD0428185
Title : ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT.
Descriptive Note : Interim engineering rept. no. 5, 1 Sep-30 Nov 63.
Corporate Author : HP ASSOCIATES PALO ALTO CALIF
Report Date : 30 Nov 1963
Pagination or Media Count : 97
Abstract : Research was continued on a program to improve and exploit semiconductor optoelectronic phenom ena effect for potential use in functional electronic blocks. Detailed studies of the capacitance and of the V-I characteristics and emission bands as a function of temperature were made for zincdiffused GaAs diodes. The degree of reproducibility of our el diode fabrication procedure was established, and various materials for diffusion substrates were evaluated. The formation of ohmic contacts to the diodes was improved. GaAs el diodes were fabricated by depositing epitaxial n-type material on p-type substrates. The optical and electrical properties at 77K and 300K are reported. Limited work was done on diodes formed by zinc diffusion into n-type epitaxial layers. Si phototransistors for use in optic amplifiers were studied. The present method for assembling the optic amplifier consisting of a GaAs el diode and a Si phototransistor is described. Coupling problems are discussed.
Descriptors : *INTEGRATED CIRCUITS , ELECTRON OPTICS , ELECTRON OPTICS , CAPACITANCE , VOLTAGE , ELECTRIC CURRENT , GALLIUM ALLOYS , ARSENIC ALLOYS , ZINC , DIFFUSION , MANUFACTURING , FIXED CONTACTS , SEMICONDUCTOR DIODES , EPITAXIAL GROWTH , CRYOGENICS , AMPLIFIERS , SEMICONDUCTING FILMS , VAPOR PLATING , LUMINESCENCE
Distribution Statement : APPROVED FOR PUBLIC RELEASE