Accession Number : AD0428051


Title :   A DEVELOPMENTAL STUDY OF A HIGH FREQUENCY UNIPOLAR FIELD EFFECT TRANSISTOR,


Corporate Author : FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF FAIRCHILD SEMICONDUCTOR DIV


Personal Author(s) : Ragle,L ; Purnaiya,M


Report Date : Sep 1963


Pagination or Media Count : 35


Abstract : The design, construction, and performance of a very small active area field effect transistor are presented. It was desired to make a high 100 Mc. input impedance, high transconductance field effect transistor. The input impedance at 100 Mc. is predominantly capacitive, and high input impedance is obtained by making the device area as small as possible. High transconductance is sought by making an interdigitated structure. The important experimental design considerations taken into account, together with fabrication problems which arose during the FET development, are discussed. Also discussed are those factors which influenced yield, the most important of which were the photolithographic steps. The d. c. electrical characteristics obtained with two different geometries of field effect devices are discussed. These characteristics are related to the device geometry and diffusion structure to the extent that this is possible. The high frequency characteristics of the device in terms of Y matrix characterization are noted. An equivalent circuit model is derived, and performance compared with design objectives. (Author)


Descriptors :   *TRANSISTORS , *MANUFACTURING , ELECTRIC FIELDS , PRODUCTION , ELECTRICAL IMPEDANCE , CAPACITANCE , SILICON , GALLIUM , DIFFUSION , OXIDES , ETCHED CRYSTALS , PERFORMANCE(ENGINEERING) , RADIOFREQUENCY , ADMITTANCE , GAIN , VOLTAGE


Distribution Statement : APPROVED FOR PUBLIC RELEASE