Accession Number : AD0428020


Title :   HIGH SPEED POWER AMPLIFIER USING ELECTRON BEAM SWITCHED P-N JUNCTIONS.


Descriptive Note : Interim development rept., 27 Sep-26 Dec 63.


Corporate Author : TUNG-SOL ELECTRIC INC BLOOMFIELD N J


Report Date : 17 Jan 1964


Pagination or Media Count : 24


Abstract : Experimental electron beam multiplier (EBM) tubes have been made in which a diode pulse current of 2.0 amperes was obtained at 50 to 140 volts for a passivated silicon diode without heat sink, and 4.0 amperes at 200 to 220 volts for bare junction silicon diode with heat sink. These values were obtained at less than rated beam current for the EBM. The anode potential was in the order of 20 KV. The pulse repetition rate was 100 pps. The pulse duration was approximately 1 microsecond. An electron gun has been designed for the EBM tube to give 5 ma beam current, a cut-off voltage of less than 20 volts and a transconductance of 900 to 1100 micromhos. The heat sink design has been modified to facilitate diode assembly. Thermal resistance measurements indicate that the heat sink should adequately dissipate 60 watts of power with no more than a safe temperature rise to 148 C. (Author)


Descriptors :   *SEMICONDUCTOR DIODES , PULSE AMPLIFIERS , PULSE AMPLIFIERS , TEMPERATURE , POWER , SILICON , VOLTAGE , ALUMINUM , PRODUCTION


Distribution Statement : APPROVED FOR PUBLIC RELEASE