Accession Number : AD0427362


Title :   EVAPORATED THIN-FILM DEVICES.


Descriptive Note : Final rept., 1 June 62-30 Sep 63,


Corporate Author : RCA LABS PRINCETON NJ


Personal Author(s) : Borkan, H ; Henrich, V E ; Shallcross, F V ; Waxman, A ; Weimer, P K


Report Date : 31 Oct 1963


Pagination or Media Count : 58


Abstract : Research concerned thin-film devices which had evaporated. The operating characteristics of the insulated-gate thin-film transistor (TFT) are shown in good agreement with a simple field-effect analysis. A coplanar-electrode TFT structure has yielded improved performance and is simpler to fabricate than the earlier staggeredelectrode structure. A p-type TFT, having excellent enhancement-type characteristics, was made using evaporated tellurium as the semiconductor. Studies of mobility in the space-charge layer using the TFT as a research tool have shown the existence of barriers between crystallites in a polycrystalline cadmium sulfide film. (Author)


Descriptors :   SEMICONDUCTING FILMS , TRANSISTORS , ELECTRICAL INSULATION , ELECTRODES , VAPOR PLATING , TELLURIUM , SPACE CHARGE , CADMIUM COMPOUNDS , SULFIDES , SURFACE PROPERTIES , FIXED CONTACTS , SEMICONDUCTOR DIODES , HALL EFFECT , ELECTRICAL RESISTANCE


Distribution Statement : APPROVED FOR PUBLIC RELEASE