Accession Number : AD0427196


Title :   500 C SILICON CARBIDE RECTIFIER PROGRAM.


Descriptive Note : Interim technical progress rept. no. 9, 1 Oct31 Dec 63,


Corporate Author : WESTINGHOUSE ELECTRIC CORP YOUNGWOOD PA


Personal Author(s) : Chang,H C ; Jennings,V J ; Thornburg,D R ; Kroko,L J ; Ostroski,J


Report Date : 31 Dec 1963


Pagination or Media Count : 17


Abstract : Efforts were continued on the development of methods for quality-quantity production of SiC rectifiers. A larger diameter sublimation furnace was designed and fabrication will begin shortly. With a larger growth cavity and therefore a greater surface area available for crystal growth, the number of usable crystals per run should increase. Epitaxial layers of containing a p-n junction were prepared and evaluation is in progress. The design of the equipment needed for quantity production of SiC rectifiers is nearly complete. (Author)


Descriptors :   *MANUFACTURING , CRYSTAL RECTIFIERS , CARBON ALLOYS , CARBIDES , SUBLIMATION , FURNACES , PRODUCTION , EPITAXIAL GROWTH , CRYSTAL GROWTH


Distribution Statement : APPROVED FOR PUBLIC RELEASE