Accession Number : AD0427117


Title :   STUDY OF SURFACE STATES IN SEMICONDUCTORS,


Corporate Author : TYCO LABS INC WALTHAM MASS


Personal Author(s) : Rupprecht,G


Report Date : Dec 1963


Pagination or Media Count : 17


Abstract : Research concerns a study of surface states in semiconductors. Apparatus for the pulsed field effect was assembled and tested by reproducing previous experiments on silicon and germanium surfaces. Measurements on n-type silicon indicate surface states with cross-sections of 10 to the -12th power sq cm 0.73 e.V. below the conduction band, near those previously reported at 0.62 e.V. The pulsed field effect experiment on germanium surfaces, however, revealed slow surface states whose decay times increased as adsorbed gases were removed. (Author)


Descriptors :   SURFACE PROPERTIES , SEMICONDUCTORS , SILICON , GERMANIUM , ELECTRICAL CONDUCTIVITY , ELECTRONS , FIXED CONTACTS , CRYOGENICS , VACUUM APPARATUS


Distribution Statement : APPROVED FOR PUBLIC RELEASE