Accession Number : AD0427058


Title :   FAILURE MECHANISMS AT SURFACES AND INTERFACES.


Descriptive Note : Interim technical documentary rept. no. 1, 1 July-1 Oct 63,


Corporate Author : GENERAL ELECTRIC CO SYRACUSE N Y


Personal Author(s) : Reinhartz,K K ; Russell,V A ; Stockman,D L ; van der Grinten,W J ; Willis,W L


Report Date : Dec 1963


Pagination or Media Count : 45


Abstract : One hundred and fifty plates, each containing three thin film active devices were fabricated, and approximately 50 of them were subjected to temperature, humidity, and electrical stresses under controlled conditions. The initial objective, which was the establishment of stress levels leadings to significant changes of device parameters within one or two weeks, was achieved in all cases. For thin film triodes the parameter found to be most sensitive to aging effects was the d.c. gate voltage necessary to obtain a standard power output. An analytical expression for a high temperature degradation case has been found with strong indications that the corresponding failure mechanism occurs at the SiO-CdS interface. High humidity stresses produced gradual degradation and partially reversible catastrophic failures. (Author)


Descriptors :   ENVIRONMENTAL TESTS , TRANSISTORS , THERMAL STRESSES , CADMIUM ALLOYS , SULFIDES , DIELECTRIC FILMS , ELECTRICAL RESISTANCE , HUMIDITY , TEST EQUIPMENT


Distribution Statement : APPROVED FOR PUBLIC RELEASE