Accession Number : AD0273845


Title :   HIGH TEMPERATURE SEMICONDUCTOR RESEARCH


Descriptive Note : Scientific rept. no. 8


Corporate Author : DAVID SARNOFF RESEARCH CENTER PRINCETON NJ


Personal Author(s) : Blanc, J ; Bube, R H ; Liebmann, W K ; Richman, D ; Weisberg, L R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/273845.pdf


Report Date : 31 Jan 1962


Pagination or Media Count : 21


Abstract : The explosions in the high pressure magnetic Czochralski apparatus for the growth of GaP were eliminated. In repeated tests, boules of GaP were prepared without difficulty. Thermally stimulated current measurements of high resistivity GaAs after annealing at 700 C in molten KCN for 16 hr have verified that the concentration of traps in GaAs prepared by the horizontal Bridgman technique are distinctly lower than in GaAs prepared by the floating zone technique. The rate of cooling of GaAs crystals subsequent to growth has a marked effect on their electrical properties. Rapidly cooled crystals tend to be high resistivity. Because of wide discrepancies in measurements reported in the literature, accurate measurements of the temperature variation of the dissociation pressure are being carried out using a quartz Bourdon gauge. Experiments were carried out indicating that C can be transported during the sublimation of As by both mechanical and chemical means. This, together with other evidence, makes it plausible that the black deposit observed remaining behind after multiple sublimations of spectrographically pure As is carbon.


Descriptors :   *PHOSPHIDES , *GALLIUM COMPOUNDS , *ARSENIDES , *SEMICONDUCTORS , CARBON , IMPURITIES , TRANSPORT PROPERTIES , PRESSURE , ELECTRICAL RESISTANCE , ARSENIC , GROWTH(PHYSIOLOGY) , CRYSTALS , CRYSTALLIZATION , INTERMETALLIC COMPOUNDS , VAPORS , HIGH TEMPERATURE


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE