Accession Number : AD0021862


Title :   RESEARCH ON THE ELECTRICAL PROPERTIES OF SEMI-CONDUCTORS


Descriptive Note : Status rept. no. 4


Corporate Author : ILLINOIS UNIV AT URBANA ELECTRICAL ENGINEERING RESEARCH LAB


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/021862.pdf


Report Date : 15 Sep 1953


Pagination or Media Count : 6


Abstract : Studies are being made of the semiconducting properties of single crystals of PbTe. Prolonged heating of the Pb in a Vycor vessel before adding the Te apparently aided in the removal of oxides. The excess Pb excluded during growth appeared as a free-Pb cap on the end of the crystal. The crystal was cleaved into slices about 1/8 in. thick to measure the thermoelectric effect. The top slice was n type; the others were p type. A p-n juncture was found. Tesistivity (rho) measurements were made over a small temperature range (approximately 200 deg to 375 deg K) for 1 n-type sample. The plot of the 1n rho vs 1/(temperature) which is included was a straight line. A value of 1.2x1017 carriers was estimated from an assumed room-temperature mobility of 2000 sq cm/v-sec.


Descriptors :   *SEMICONDUCTORS , *THERMOELECTRICITY , THICKNESS , REMOVAL , SINGLE CRYSTALS , CRYSTALS , P TYPE SEMICONDUCTORS , MEASUREMENT , N TYPE SEMICONDUCTORS , RANGE(EXTREMES) , JUNCTIONS , TEMPERATURE , OXIDES


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE