Accession Number : AD0000994


Title :   FORMATION, STABILITY AND CRYSTAL STRUCTURE OF SOLID SILICON MONOXIDE


Corporate Author : OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS CRYOGENIC LAB


Personal Author(s) : HOCH, MICHAEL ; JOHNSTON, HERRICK L


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/000994.pdf


Report Date : 27 Feb 1953


Pagination or Media Count : 17


Abstract : The formation of solid SiO from Si and SiOsub2 was observed fro m x- ray diffraction patterns. At 1250 deg C, no SiO formed; at 1300 deg C, the mixture of Si and SiOsub2 completely transformed into SiO after heating for about 9 hr. The intensity of the Si diffraction lines decreased during this period, while the intensity of the SiO lines increased. The SiO was quenched from 1300 deg to 850 deg C in 2 sec to a mixture of SiOsub2, SiO and Si. Si had the same body-centered lattice at 1300 deg and at 25 deg C, with a lattice constant of a = 5.445 A at 1300 deg C and a = 5.413 A at 25 deg C. The lattice of SiO was cubic; the lattice constants were 7.135 and 7.09 A at 1300 deg and 25 deg C respectively.


Descriptors :   *CRYSTAL LATTICES , SOLIDS , CONSTANTS , PATTERNS


Subject Categories : Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE